| PART |
Description |
Maker |
| Q62703-Q1088 SFH482-ME7800 SFH480 Q62703-Q1089 Q62 |
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 发动器，红外Lumineszenzdioden 880纳米红外辐射器的GaAIAs 880纳米
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 1 ELEMENT, INFRARED LED, 880 nm
From old datasheet system
|
红外LED
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| TSMF3700 |
GaAlAs/GaAlAs Infrared Emitting Diode in SMT Package
|
Vishay Siliconix
|
| TSHA520. TSHA5202 TSHA5201 TSHA5200 TSHA520 TSHA52 |
GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package
GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package
From old datasheet system
GaAlAs Infrared Emitting Diodes in 5 mm (T-13/4) Package
GaAlAs Infrared Emitting Diodes in ? 5 mm (T?1 3/4)Package
GaAlAs Infrared Emitting Diodes in 酶 5 mm (T-13/4) Package
GaAlAs Infrared Emitting Diodes in 5 mm (T-13/4) Package
|
VISAY[Vishay Siliconix]
TFUNK[Vishay Telefunken]
Vishay Intertechnology,Inc.
|
| TSHA440. TSHA4400 TSHA440 TSHA4401 |
GaAlAs Infrared Emitting Diodes in ?3 mm (T-1) Package
From old datasheet system
GaAlAs Infrared Emitting Diodes in 3 mm (T-1) Package
GaAlAs Infrared Emitting Diodes in ? 3 mm (T?1)Package
|
VISAY[Vishay Siliconix]
TFUNK[Vishay Telefunken]
|
| OP296 OP295 OP297 |
GaAlAs Plastic Infrared Emitting Diode(铝砷化镓塑料封装红外发光二极窄入射模式，峰值前向电.0A)
GaAlAs Plastic Infrared Emitting Diode(??????濉??灏??绾㈠????浜??绠?绐??灏?ā寮??宄板?????垫悼.0A)
|
Optek Technology
|
| 124141L |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 126264 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 136274 |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 115161L |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 137141 |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
http://
|
| HE7601SG |
GaAlAs Infrared Emitting Diode
|
OPNEXT[Opnext. Inc.]
|
| CL-304L |
Infrared Emitting Diodes(GaAlAs)
|
KODENSHI CORP.
KODENSHI[KODENSHI KOREA CORP.]
Kondenshi Corp
|
